Cluśter-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films

Kazunori Koga; Motohide Kai; Masaharu Shiratani; Yukio Watanabe; Nobuhiro Shikatani

doi:10.1143/JJAP.41.L168

Cluśter-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films

Kazunori Koga, Motohide Kai, Masaharu Shiratani, Yukio Watanabe, Nobuhiro Shikatani

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

We have developed a novel plasma chemical vapor deposition (PCVD) method for preparing high quality hydrogenated amorphous silicon (a-Si:H) films, which suppresses effectively growth of clusters by transporting them out of the reactor using gas flow and thermophoresis. By utilizing this cluster-suppressed PCVD method, we have demonstrated deposition of quite high quality a-Si:H films, microstructure parameter R_α of which can be reduced below 0.003. The decrease in R_α value is closely related to the decrease in cluster amount. Preliminary evaluation of fill factor (FF) of the a-Si:H Schottky solar cell of the a-Si:H films of R_α = 0.057 shows the high initial value FF_i = 0.57 and high stabilized value after-light-soaking FF_a = 0.53.

Original language	English
Pages (from-to)	L168-L170
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	2 B
DOIs	https://doi.org/10.1143/JJAP.41.L168
Publication status	Published - Feb 15 2002

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Clu{\'s}ter-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films",

abstract = "We have developed a novel plasma chemical vapor deposition (PCVD) method for preparing high quality hydrogenated amorphous silicon (a-Si:H) films, which suppresses effectively growth of clusters by transporting them out of the reactor using gas flow and thermophoresis. By utilizing this cluster-suppressed PCVD method, we have demonstrated deposition of quite high quality a-Si:H films, microstructure parameter Rα of which can be reduced below 0.003. The decrease in Rα value is closely related to the decrease in cluster amount. Preliminary evaluation of fill factor (FF) of the a-Si:H Schottky solar cell of the a-Si:H films of Rα = 0.057 shows the high initial value FFi = 0.57 and high stabilized value after-light-soaking FFa = 0.53.",

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T1 - Cluśter-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films

AU - Koga, Kazunori

AU - Kai, Motohide

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

AU - Shikatani, Nobuhiro

PY - 2002/2/15

Y1 - 2002/2/15

N2 - We have developed a novel plasma chemical vapor deposition (PCVD) method for preparing high quality hydrogenated amorphous silicon (a-Si:H) films, which suppresses effectively growth of clusters by transporting them out of the reactor using gas flow and thermophoresis. By utilizing this cluster-suppressed PCVD method, we have demonstrated deposition of quite high quality a-Si:H films, microstructure parameter Rα of which can be reduced below 0.003. The decrease in Rα value is closely related to the decrease in cluster amount. Preliminary evaluation of fill factor (FF) of the a-Si:H Schottky solar cell of the a-Si:H films of Rα = 0.057 shows the high initial value FFi = 0.57 and high stabilized value after-light-soaking FFa = 0.53.

AB - We have developed a novel plasma chemical vapor deposition (PCVD) method for preparing high quality hydrogenated amorphous silicon (a-Si:H) films, which suppresses effectively growth of clusters by transporting them out of the reactor using gas flow and thermophoresis. By utilizing this cluster-suppressed PCVD method, we have demonstrated deposition of quite high quality a-Si:H films, microstructure parameter Rα of which can be reduced below 0.003. The decrease in Rα value is closely related to the decrease in cluster amount. Preliminary evaluation of fill factor (FF) of the a-Si:H Schottky solar cell of the a-Si:H films of Rα = 0.057 shows the high initial value FFi = 0.57 and high stabilized value after-light-soaking FFa = 0.53.

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Cluśter-suppressed plasma chemical vapor deposition method for high quality hydrogenated amorphous silicon films

Abstract

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