Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

Koichi Naniwae; Masaki Ohya; Kiichi Hamamoto; Kenichi Nishi; Tatsuya Sasaki

Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

Koichi Naniwae, Masaki Ohya, Kiichi Hamamoto, Kenichi Nishi, Tatsuya Sasaki

Research output: Contribution to journal › Conference article › peer-review

Abstract

Investigating the use of tertiarybutylchloride (TBCl) to clean residual silicon from InP regrowth interfaces in an MOVPE reactor, we found the amount of the residual silicon to be greatly decreased when trimethylindium was supplied together with TBCl in order to balance the etching rate and the growth rate during the cleaning process. Using this cleaning process in the fabrication of buried hetero-structure laser diodes, we demonstrated that it improves their light-current characteristics by reducing the leakage current in the devices.

Original language	English
Pages (from-to)	126-129
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 2004
Externally published	Yes
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: May 31 2004 → Jun 4 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{dd1f4200814f49c1bb7592f21cd6965a,

title = "Cleaning of residual silicon on InP regrowth interface in MOVPE reactor",

abstract = "Investigating the use of tertiarybutylchloride (TBCl) to clean residual silicon from InP regrowth interfaces in an MOVPE reactor, we found the amount of the residual silicon to be greatly decreased when trimethylindium was supplied together with TBCl in order to balance the etching rate and the growth rate during the cleaning process. Using this cleaning process in the fabrication of buried hetero-structure laser diodes, we demonstrated that it improves their light-current characteristics by reducing the leakage current in the devices.",

author = "Koichi Naniwae and Masaki Ohya and Kiichi Hamamoto and Kenichi Nishi and Tatsuya Sasaki",

year = "2004",

language = "English",

pages = "126--129",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

}

TY - JOUR

T1 - Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

AU - Naniwae, Koichi

AU - Ohya, Masaki

AU - Hamamoto, Kiichi

AU - Nishi, Kenichi

AU - Sasaki, Tatsuya

PY - 2004

Y1 - 2004

N2 - Investigating the use of tertiarybutylchloride (TBCl) to clean residual silicon from InP regrowth interfaces in an MOVPE reactor, we found the amount of the residual silicon to be greatly decreased when trimethylindium was supplied together with TBCl in order to balance the etching rate and the growth rate during the cleaning process. Using this cleaning process in the fabrication of buried hetero-structure laser diodes, we demonstrated that it improves their light-current characteristics by reducing the leakage current in the devices.

AB - Investigating the use of tertiarybutylchloride (TBCl) to clean residual silicon from InP regrowth interfaces in an MOVPE reactor, we found the amount of the residual silicon to be greatly decreased when trimethylindium was supplied together with TBCl in order to balance the etching rate and the growth rate during the cleaning process. Using this cleaning process in the fabrication of buried hetero-structure laser diodes, we demonstrated that it improves their light-current characteristics by reducing the leakage current in the devices.

UR - http://www.scopus.com/inward/record.url?scp=23744500793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23744500793&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23744500793

SN - 1092-8669

SP - 126

EP - 129

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

Abstract

All Science Journal Classification (ASJC) codes

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