TY - JOUR
T1 - Chemical stability improvement in IGZO using selective laser annealing system
AU - Goto, Tetsuya
AU - Saito, Kaori
AU - Imaizumi, Fuminobu
AU - Mizumura, Michinobu
AU - Suwa, Akira
AU - Ikenoue, Hiroshi
AU - Sugawa, Shigetoshi
N1 - Funding Information:
TFT fabrications were carried out at the fluctuation free facility of New Industry Creation Hatchery Center, Tohoku University.
Publisher Copyright:
© (2017) by SID-the Society for Information Display. All rights reserved.
PY - 2017
Y1 - 2017
N2 - Selective laser annealing system using KrF excimer laser was applied to amorphous IGZO films. IGZO film was crystallized for the laser-irradiated area (60µm square), where the chemical stability against acid solutions was improved. The stability against the negative bias illumination stress for the laser-treated TFT was improved. Furthermore, TFT could be fabricated without the photo lithography for the island patterning.
AB - Selective laser annealing system using KrF excimer laser was applied to amorphous IGZO films. IGZO film was crystallized for the laser-irradiated area (60µm square), where the chemical stability against acid solutions was improved. The stability against the negative bias illumination stress for the laser-treated TFT was improved. Furthermore, TFT could be fabricated without the photo lithography for the island patterning.
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U2 - 10.1002/sdtp.11711
DO - 10.1002/sdtp.11711
M3 - Conference article
AN - SCOPUS:85044445284
SN - 0097-966X
VL - 48
SP - 604
EP - 607
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
IS - 1
T2 - SID Symposium, Seminar, and Exhibition 2017, Display Week 2017
Y2 - 21 May 2017 through 26 May 2017
ER -