Chemical beam epitaxy of GaN using triethylgallium and ammonia

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

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4 Citations (Scopus)


GaN films were successfully grown on Al2O3(0 0 0 1) and 6H-SiC(0 0 0 1) substrates by chemical beam epitaxy (CBE) using triethylgallium (TEG) and ammonia (NH3) as group III and group V sources. Reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to characterize the growth processes, surface morphologies and the film qualities of GaN. It was found that the GaN growth mode was two-dimensional and that the GaN quality was improved by increasing the NH3 supply. XRD measurements show that the quality of GaN films grown on 6H-SiC(0 0 0 1) substrates is better than that grown on Al2O3(0 0 0 1) substrates. AFM characterizations illustrate that the surface morphologies of GaN are greatly influenced by the NH3 flow rates.

Original languageEnglish
Pages (from-to)86-91
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - Jun 1 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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