Charge carrier injection and transport in organic thin films

Toshinori Matsushima, Guang He Jin, Yoshihiro Kanai, Tomoyuki Yokota, Seiki Kitada, Toshiyuki Kishi, Hideyuki Murata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N′- diphenyl-N,N′-bis(1-naphthyl) -1,1′-biphenyl-4,4′-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO 3 layer forms Ohmic hole injection at the ITO/MoO3/ α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO3 and from α-NPD to MoO3. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD) using an ultrathin MoO3 layer as well.

Original languageEnglish
Title of host publicationOrganic Light Emitting Materials and Devices XII
Publication statusPublished - 2008
Externally publishedYes
EventOrganic Light Emitting Materials and Devices XII - San Diego, CA, United States
Duration: Aug 10 2008Aug 12 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOrganic Light Emitting Materials and Devices XII
Country/TerritoryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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