Characterization of transport properties of multiwalled carbon nanotube networks by microwave plasma chemical vapor deposition

Yasuhiko Hayashi, T. Tokunaga, K. Kaneko, Z. Horita

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    5 Citations (Scopus)


    We report the synthesis of multiwalled carbon nanotubes (MWCNTs) and the characterization of temperature-dependent electrical transport properties of MWCNT networks by using a two-point configuration without the lithographical technique. MWCNTs were grown by microwave plasma chemical vapor deposition with the bias enhanced growth technique. The Raman intensity ratio between the D- (∼1360 cm- 1) and G- (∼1590 cm- 1) peaks (ID / IG) as well as the full width at half maximum of the G-peak decreased from 1.03 to 0.03 and 18 to 13 cm- 1, respectively, with the increase in the oxidative purification time. This indicates that the crystallinity of graphite sheets is improved by the oxidative purification process and burn-off of the defects in MWCNT networks. The metal electrodes were attached on both the top and the bottom of the insulating thin films, and the as-grown and oxidative-purified MWCNT networks were connected between the electrodes for I-V measurements at various temperatures. At room temperature, the conductance for the MWNT networks at around zero bias was 0.65 G0 (G0: fundamental conductance unit), which was less than the value of 1 G0 for metallic MWCNTs. Further, the conductance increased linearly with the bias voltage until it attained its peak. In the 190-390 K range, the temperature characteristic of the I-V shows that the electron transport of the as-grown MWCNT networks was activated by a lower activation energy than that in oxidative-purified MWCNT networks.

    Original languageEnglish
    Pages (from-to)1138-1142
    Number of pages5
    JournalDiamond and Related Materials
    Issue number4-8
    Publication statusPublished - Apr 2006

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • General Chemistry
    • Mechanical Engineering
    • Materials Chemistry
    • Electrical and Electronic Engineering


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