Characterization of Si thin films doped by wet-chemical laser processing

Akira Suwa; Nozomu Tanaka; Taizoh Sadoh; Daisuke Nakamura; Hiroshi Ikenoue

doi:10.1002/sdtp.11659

Characterization of Si thin films doped by wet-chemical laser processing

Akira Suwa, Nozomu Tanaka, Taizoh Sadoh, Daisuke Nakamura, Hiroshi Ikenoue

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

In this paper, we report on the characterization of Si thin films doped by wet-chemical laser processing. Using this method, implantation and dopant activation can be performed simultaneously. After laser doping, the mobility, carrier concentration, and resistivity of the films were 74 cm²/V·s, 5.5 × 10¹⁷ cm^-3, and 0.15 Ω·cm, respectively.

Original language	English
Pages (from-to)	430-432
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	48
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.11659
Publication status	Published - Jan 1 2017
Event	SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States Duration: May 21 2017 → May 26 2017

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.11659

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title = "Characterization of Si thin films doped by wet-chemical laser processing",

abstract = "In this paper, we report on the characterization of Si thin films doped by wet-chemical laser processing. Using this method, implantation and dopant activation can be performed simultaneously. After laser doping, the mobility, carrier concentration, and resistivity of the films were 74 cm2/V·s, 5.5 × 1017 cm-3, and 0.15 Ω·cm, respectively.",

author = "Akira Suwa and Nozomu Tanaka and Taizoh Sadoh and Daisuke Nakamura and Hiroshi Ikenoue",

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T1 - Characterization of Si thin films doped by wet-chemical laser processing

AU - Suwa, Akira

AU - Tanaka, Nozomu

AU - Sadoh, Taizoh

AU - Nakamura, Daisuke

AU - Ikenoue, Hiroshi

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this paper, we report on the characterization of Si thin films doped by wet-chemical laser processing. Using this method, implantation and dopant activation can be performed simultaneously. After laser doping, the mobility, carrier concentration, and resistivity of the films were 74 cm2/V·s, 5.5 × 1017 cm-3, and 0.15 Ω·cm, respectively.

AB - In this paper, we report on the characterization of Si thin films doped by wet-chemical laser processing. Using this method, implantation and dopant activation can be performed simultaneously. After laser doping, the mobility, carrier concentration, and resistivity of the films were 74 cm2/V·s, 5.5 × 1017 cm-3, and 0.15 Ω·cm, respectively.

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DO - 10.1002/sdtp.11659

M3 - Conference article

AN - SCOPUS:85044458977

SN - 0097-966X

VL - 48

SP - 430

EP - 432

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - SID Symposium, Seminar, and Exhibition 2017, Display Week 2017

Y2 - 21 May 2017 through 26 May 2017

ER -

Characterization of Si thin films doped by wet-chemical laser processing

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