TY - GEN
T1 - Characterization of residual strain in Si ingots grown by the seed-cast method
AU - Jiptner, Karolin
AU - Fukuzawa, Masayuki
AU - Miyamura, Yoshiji
AU - Harada, Hirofumi
AU - Kakimoto, Koichi
AU - Sekiguchi, Takashi
PY - 2014
Y1 - 2014
N2 - The residual strain distribution in cast-grown mono-like Si ingots is analyzed. The effect of the crucible during solidification and the influence of different cooling rates is described. To clarify in which process steps residual strain accumulates, several Si ingots were grown in a laboratory scale furnace (Ø100 mm) using different cooling conditions after completion of the solidification. For the cooling, two different cooling rates were distinguished: fast cooling (12°C/min) and slow cooling (5°C/min). It was found that changes in cooling gradients greatly influence the amount of residual strain. The results show that slow cooling in any temperature range leads to strain reduction. The greatest reduction could be found when the temperature gradient was changed to slow cooling in the high temperature region.
AB - The residual strain distribution in cast-grown mono-like Si ingots is analyzed. The effect of the crucible during solidification and the influence of different cooling rates is described. To clarify in which process steps residual strain accumulates, several Si ingots were grown in a laboratory scale furnace (Ø100 mm) using different cooling conditions after completion of the solidification. For the cooling, two different cooling rates were distinguished: fast cooling (12°C/min) and slow cooling (5°C/min). It was found that changes in cooling gradients greatly influence the amount of residual strain. The results show that slow cooling in any temperature range leads to strain reduction. The greatest reduction could be found when the temperature gradient was changed to slow cooling in the high temperature region.
UR - http://www.scopus.com/inward/record.url?scp=84886770528&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84886770528&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.205-206.94
DO - 10.4028/www.scientific.net/SSP.205-206.94
M3 - Conference contribution
AN - SCOPUS:84886770528
SN - 9783037858240
T3 - Solid State Phenomena
SP - 94
EP - 99
BT - Gettering and Defect Engineering in Semiconductor Technology XV
PB - Trans Tech Publications Ltd
T2 - 15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
Y2 - 22 September 2013 through 27 September 2013
ER -