Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy

W.-C. Wen; T. Sakaguchi; K. Yamamoto; D. Wang; H. Nakashima

doi:10.7567/ssdm.2017.k-1-04

Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy

W.-C. Wen
, T. Sakaguchi
, K. Yamamoto
, D. Wang
, H. Nakashima

Energy Engineering Sciences

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	505-506
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2017.k-1-04
Publication status	Published - Sept 20 2017
Event	2017 International Conference on Solid State Devices and Materials (SSDM2017) - Sendai International Center, Sendai, Japan Duration: Sept 19 2017 → Sept 22 2017

Conference

Conference	2017 International Conference on Solid State Devices and Materials (SSDM2017)
Country/Territory	Japan
City	Sendai
Period	9/19/17 → 9/22/17

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10.7567/ssdm.2017.k-1-04Licence: Unspecified

Cite this

Wen, W.-C., Sakaguchi, T., Yamamoto, K., Wang, D., & Nakashima, H. (2017). Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy. 505-506. Paper presented at 2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai, Japan. https://doi.org/10.7567/ssdm.2017.k-1-04

Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy. / Wen, W.-C.; Sakaguchi, T.; Yamamoto, K. et al.
2017. 505-506 Paper presented at 2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai, Japan.

Research output: Contribution to conference › Paper › peer-review

Wen, W-C, Sakaguchi, T, Yamamoto, K , Wang, D & Nakashima, H 2017, 'Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy', Paper presented at 2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai, Japan, 9/19/17 - 9/22/17 pp. 505-506. https://doi.org/10.7567/ssdm.2017.k-1-04

Wen WC, Sakaguchi T, Yamamoto K , Wang D, Nakashima H. Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy. 2017. Paper presented at 2017 International Conference on Solid State Devices and Materials (SSDM2017), Sendai, Japan. doi: 10.7567/ssdm.2017.k-1-04

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title = "Characterization of near-interface border-traps in GeO2/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy",

author = "W.-C. Wen and T. Sakaguchi and K. Yamamoto and D. Wang and H. Nakashima",

year = "2017",

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doi = "10.7567/ssdm.2017.k-1-04",

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AU - Wen, W.-C.

AU - Sakaguchi, T.

AU - Yamamoto, K.

AU - Wang, D.

AU - Nakashima, H.

PY - 2017/9/20

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T2 - 2017 International Conference on Solid State Devices and Materials (SSDM2017)

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Characterization of near-interface border-traps in GeO<sub>2</sub>/Ge gate stacks grown by low and high temperature thermal oxidation using deep-level transient spectroscopy

Conference

Access to Document

Cite this