TY - GEN
T1 - Characterization of gated cold cathode fabrication using standing thin-film technique
AU - Yoshida, Tomoya
AU - Asano, Tanemasa
PY - 2007
Y1 - 2007
N2 - We have proposed a novel process of fabricating a high-aspect-ratio tip structure, which utilizes the bending of a cantilever made of a sputter deposited WSi2 film induced by ion irradiation. We demonstrated high-current field-electron emission from a gated field emitter array (FEA) fabricated by using the thin-film standing technique. In this paper, characterization of the FEA particularly in terms of emission stability and uniformity is reported. We find an ac-driving is more suitable than a dc-driving in order to decrease the required number of tips in a pixel and to meet the requirement of FED application.
AB - We have proposed a novel process of fabricating a high-aspect-ratio tip structure, which utilizes the bending of a cantilever made of a sputter deposited WSi2 film induced by ion irradiation. We demonstrated high-current field-electron emission from a gated field emitter array (FEA) fabricated by using the thin-film standing technique. In this paper, characterization of the FEA particularly in terms of emission stability and uniformity is reported. We find an ac-driving is more suitable than a dc-driving in order to decrease the required number of tips in a pixel and to meet the requirement of FED application.
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U2 - 10.1109/IVELEC.2007.4283286
DO - 10.1109/IVELEC.2007.4283286
M3 - Conference contribution
AN - SCOPUS:47649112603
SN - 1424406331
SN - 9781424406333
T3 - 8th IEEE International Vacuum Electronics Conference, IVEC 2007
SP - 201
EP - 202
BT - 8th IEEE International Vacuum Electronics Conference, IVEC 2007
T2 - 8th IEEE International Vacuum Electronics Conference, IVEC 2007
Y2 - 15 May 2007 through 17 May 2007
ER -