Characterization of GaN quantum dots on AlGaN/SiC substrate using cathodoluminescence

GaN quantum dots on an AlGaN surface can be fabricated by the use of Si as a surface modifier for the formation of the quantum dots. The details of this mechanism is not yet fully understood. The scope of this paper is to investigate how the growth temperature is affecting the formation of these types of structures. By the use of cathodoluminescence it was possible to visualize the spatial distribution of the luminescence from the quantum dots, the barrier and luminescence tentatively attributed to deep level impurities induced by the Si treatment.