Characterization of disorder and annealing behavior of Si-implanted Ga 1-xAlx As with laser Raman spectroscopy

Koichi Kakimoto; Takashi Katoda

doi:10.1063/1.337030

Characterization of disorder and annealing behavior of Si-implanted Ga _1-xAl_x As with laser Raman spectroscopy

Koichi Kakimoto, Takashi Katoda

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Effects of aluminum in Ga_1-xAl_x As on damage introduced by Si implantation and annealing behavior were studied based on Raman spectra. Increase in aluminum content suppresses the introduction of damage. However, aluminum in Ga_1-xAl_xAs reduced the concentration of Si in lattice site after annealing.

Original language	English
Pages (from-to)	1477-1481
Number of pages	5
Journal	Journal of Applied Physics
Volume	59
Issue number	5
DOIs	https://doi.org/10.1063/1.337030
Publication status	Published - 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.337030

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title = "Characterization of disorder and annealing behavior of Si-implanted Ga 1-xAlx As with laser Raman spectroscopy",

abstract = "Effects of aluminum in Ga1-xAlx As on damage introduced by Si implantation and annealing behavior were studied based on Raman spectra. Increase in aluminum content suppresses the introduction of damage. However, aluminum in Ga1-xAlxAs reduced the concentration of Si in lattice site after annealing.",

author = "Koichi Kakimoto and Takashi Katoda",

year = "1986",

doi = "10.1063/1.337030",

language = "English",

volume = "59",

pages = "1477--1481",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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T1 - Characterization of disorder and annealing behavior of Si-implanted Ga 1-xAlx As with laser Raman spectroscopy

AU - Kakimoto, Koichi

AU - Katoda, Takashi

PY - 1986

Y1 - 1986

N2 - Effects of aluminum in Ga1-xAlx As on damage introduced by Si implantation and annealing behavior were studied based on Raman spectra. Increase in aluminum content suppresses the introduction of damage. However, aluminum in Ga1-xAlxAs reduced the concentration of Si in lattice site after annealing.

AB - Effects of aluminum in Ga1-xAlx As on damage introduced by Si implantation and annealing behavior were studied based on Raman spectra. Increase in aluminum content suppresses the introduction of damage. However, aluminum in Ga1-xAlxAs reduced the concentration of Si in lattice site after annealing.

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U2 - 10.1063/1.337030

DO - 10.1063/1.337030

M3 - Article

AN - SCOPUS:0343853978

SN - 0021-8979

VL - 59

SP - 1477

EP - 1481

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Characterization of disorder and annealing behavior of Si-implanted Ga _1-xAl_x As with laser Raman spectroscopy

Abstract

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