Characteristics of bloch line pair propagation with cr bit pattern

The artificial stress-induced anisotropy in a liquid phase epitaxial garnet film has been studied aiming at the application to a bit confinement pattern in Bloch line memory. The potential well for a vertical Bloch line (VBL) pair generated by the stress-induced anisotropy variation has been computed. VBL bit propagation is studied experimentally for a test chip with the stress-induced bit positions. The bit propagation was successfully performed under the Cr bit pattern with a periodic film thickness variation of 0.08 ym by applying the drive pulses with rise time shorter than 100 ns and fall time longer than 1000 ns.