Characteristics of a novel compliant bump for 3-D stacking with high-density inter-chip connections

Engineering

• High Density 100%
• Strain 100%
• Characteristics 66%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Failure (Mechanical) 33%
• Pitch 33%
• Properties 33%
• Photoresist 33%
• Room Temperature 33%
• Si Device 33%

Physics

• Stacking 100%
• Pressure 33%
• Electrodes 33%
• Room Temperature 33%
• Deviation 33%
• Failure 33%
• Electroplating 33%