Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance

K. Fukuda; S. Harada; J. Senzaki; M. Okamoto; Y. Tanaka; A. Kinoshita; R. Kosugi; K. Kojima; M. Kato; A. Shimozato; K. Suzuki; Y. Hayashi; K. Takao; T. Kato; S. Nishizawa; T. Yatsuo; H. Okumura; H. Ohashi; K. Arai

doi:10.4028/3-908453-11-9.907

Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance

K. Fukuda, S. Harada, J. Senzaki, M. Okamoto, Y. Tanaka, A. Kinoshita, R. Kosugi, K. Kojima, M. Kato, A. Shimozato, K. Suzuki, Y. Hayashi, K. Takao, T. Kato, S. Nishizawa, T. Yatsuo, H. Okumura, H. Ohashi, K. Arai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm² and excellent dynamic characteristics.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2007
Editors	Akira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
Publisher	Trans Tech Publications Ltd
Pages	907-912
Number of pages	6
ISBN (Print)	9780878493579
DOIs	https://doi.org/10.4028/3-908453-11-9.907
Publication status	Published - 2009
Externally published	Yes
Event	12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan Duration: Oct 14 2007 → Oct 19 2007

Publication series

Name	Materials Science Forum
Volume	600-603
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country/Territory	Japan
City	Otsu
Period	10/14/07 → 10/19/07

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/3-908453-11-9.907

Cite this

Fukuda, K., Harada, S., Senzaki, J., Okamoto, M., Tanaka, Y., Kinoshita, A., Kosugi, R., Kojima, K., Kato, M., Shimozato, A., Suzuki, K., Hayashi, Y., Takao, K., Kato, T., Nishizawa, S., Yatsuo, T., Okumura, H., Ohashi, H., & Arai, K. (2009). Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance. In A. Suzuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & T. Fuyuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 907-912). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908453-11-9.907

Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance. / Fukuda, K.; Harada, S.; Senzaki, J. et al.
Silicon Carbide and Related Materials 2007. ed. / Akira Suzuki; Hajime Okumura; Kenji Fukuda; Shin-ichi Nishizawa; Tsunenobu Kimoto; Takashi Fuyuki. Trans Tech Publications Ltd, 2009. p. 907-912 (Materials Science Forum; Vol. 600-603).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fukuda, K, Harada, S, Senzaki, J, Okamoto, M, Tanaka, Y, Kinoshita, A, Kosugi, R, Kojima, K, Kato, M, Shimozato, A, Suzuki, K, Hayashi, Y, Takao, K, Kato, T, Nishizawa, S, Yatsuo, T, Okumura, H, Ohashi, H & Arai, K 2009, Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance. in A Suzuki, H Okumura, K Fukuda, S Nishizawa, T Kimoto & T Fuyuki (eds), Silicon Carbide and Related Materials 2007. Materials Science Forum, vol. 600-603, Trans Tech Publications Ltd, pp. 907-912, 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007, Otsu, Japan, 10/14/07. https://doi.org/10.4028/3-908453-11-9.907

Fukuda K, Harada S, Senzaki J, Okamoto M, Tanaka Y, Kinoshita A et al. Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance. In Suzuki A, Okumura H, Fukuda K, Nishizawa S, Kimoto T, Fuyuki T, editors, Silicon Carbide and Related Materials 2007. Trans Tech Publications Ltd. 2009. p. 907-912. (Materials Science Forum). doi: 10.4028/3-908453-11-9.907

Fukuda, K. ; Harada, S. ; Senzaki, J. et al. / Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance. Silicon Carbide and Related Materials 2007. editor / Akira Suzuki ; Hajime Okumura ; Kenji Fukuda ; Shin-ichi Nishizawa ; Tsunenobu Kimoto ; Takashi Fuyuki. Trans Tech Publications Ltd, 2009. pp. 907-912 (Materials Science Forum).

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abstract = "The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm2 and excellent dynamic characteristics.",

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AU - Tanaka, Y.

AU - Kinoshita, A.

AU - Kosugi, R.

AU - Kojima, K.

AU - Kato, M.

AU - Shimozato, A.

AU - Suzuki, K.

AU - Hayashi, Y.

AU - Takao, K.

AU - Kato, T.

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AU - Ohashi, H.

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AB - The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth surface. However, the DMOS type power MOSFETs on the C(000-1) face have not been realized because of the difficulty of epitaxial growth and of high quality MOS interface formation. We have systematically investigated the device fabrication techniques for power MOSFETs on the C(000-1) face, and succeeded with the IEMOS which have blocking voltage of 660V and an on-resistance of 1.8mΩcm2 and excellent dynamic characteristics.

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ER -

Challenges of 4H-SiC MOSFETs on the C(000-1) face toward the achievement of ultra low on-resistance

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