Epitaxial films of AlGaN grown on SiC have been investigated using cathodoluminescence, photoluminescence, scanning electron microscope and energy dispersive X-ray emission (EDX). It was found that the films were smooth and homogeneous except for occasional pits, which display characteristic luminescence. EDX measurements reveal that the central part of the pits are Ga rich. A model for the structure of the pits and their formation mechanism is presented.
|Number of pages
|Physica Scripta T
|Published - 1999
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Mathematical Physics
- Condensed Matter Physics