TY - JOUR
T1 - Cathodoluminescence induced in oxides by high-energy electrons
T2 - Effects of beam flux, electron energy, and temperature
AU - Costantini, Jean Marc
AU - Ogawa, Tatsuhiko
AU - Bhuian, AKM Saiful I.
AU - Yasuda, Kazuhiro
N1 - Funding Information:
In-situ CL measurements in a HVEM were performed at the Ultramicroscopy Research Center of Kyushu University. This work is also supported by JSPS KAKENHI with the grant number of JP16K06961 .
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/4
Y1 - 2019/4
N2 - The cathodoluminescence (CL) induced in four oxide single crystals (α-Al2O3, ZrO2: Y or YSZ, MgAl2O4, and TiO2) by high-energy electrons from 400 keV to 1250 keV was studied as a function of beam parameters (flux and energy). The main CL bands are related to F center (oxygen vacancy) formation by elastic collisions above the threshold displacement energy of oxygen atoms. The beam-intensity dependence is interpreted on the basis of a kinetic-rate model involving F-center formation and annihilation. The temperature effect was also followed from 110 K to 300 K. A broad maximum is found for all bands at about 200 K for sapphire, whereas a monotonous increase with temperature is observed for YSZ. The plots of CL intensity versus temperature are mainly interpreted by the interplay between the thermal dependence of thermalized free-carrier trapping rates and luminescence efficiency. Finally, the dependence of CL intensity on the primary electron energy for F centers in YSZ showing a maximum at about 600 keV is explained on the basis of the interplay between point-defect formation and secondary-electron energy spectra production.
AB - The cathodoluminescence (CL) induced in four oxide single crystals (α-Al2O3, ZrO2: Y or YSZ, MgAl2O4, and TiO2) by high-energy electrons from 400 keV to 1250 keV was studied as a function of beam parameters (flux and energy). The main CL bands are related to F center (oxygen vacancy) formation by elastic collisions above the threshold displacement energy of oxygen atoms. The beam-intensity dependence is interpreted on the basis of a kinetic-rate model involving F-center formation and annihilation. The temperature effect was also followed from 110 K to 300 K. A broad maximum is found for all bands at about 200 K for sapphire, whereas a monotonous increase with temperature is observed for YSZ. The plots of CL intensity versus temperature are mainly interpreted by the interplay between the thermal dependence of thermalized free-carrier trapping rates and luminescence efficiency. Finally, the dependence of CL intensity on the primary electron energy for F centers in YSZ showing a maximum at about 600 keV is explained on the basis of the interplay between point-defect formation and secondary-electron energy spectra production.
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U2 - 10.1016/j.jlumin.2018.12.045
DO - 10.1016/j.jlumin.2018.12.045
M3 - Article
AN - SCOPUS:85059117526
SN - 0022-2313
VL - 208
SP - 108
EP - 118
JO - Journal of Luminescence
JF - Journal of Luminescence
ER -