Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

Shinya Ohmagari; Takanori Hanada; Yuki Katamune; Sausan Al-Riyami; Tsuyoshi Yoshitake

doi:10.7567/JJAP.53.050307

Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

Shinya Ohmagari, Takanori Hanada, Yuki Katamune, Sausan Al-Riyami, Tsuyoshi Yoshitake

Research output: Contribution to journal › Review article › peer-review

11 Citations (Scopus)

Abstract

Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was discussed mainly on the basis of electrical measurements. It was revealed that an a-C:H matrix in UNCD/a-C:H would predominantly be responsible for carrier transportation in the photodiodes. The photodiodes exhibited high external quantum efficiencies of 72 and 23% under 254 and 365nm UV illuminations, respectively. These superior responses might be attributable to the photocarrier generation in UNCD grains accompanied by an efficient carrier transport to the a-C:H matrix.

Original language	English
Article number	050307
Journal	Japanese journal of applied physics
Volume	53
Issue number	5
DOIs	https://doi.org/10.7567/JJAP.53.050307
Publication status	Published - May 2014

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.7567/JJAP.53.050307

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Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films. / Ohmagari, Shinya; Hanada, Takanori; Katamune, Yuki et al.
In: Japanese journal of applied physics, Vol. 53, No. 5, 050307, 05.2014.

Research output: Contribution to journal › Review article › peer-review

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abstract = "Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was discussed mainly on the basis of electrical measurements. It was revealed that an a-C:H matrix in UNCD/a-C:H would predominantly be responsible for carrier transportation in the photodiodes. The photodiodes exhibited high external quantum efficiencies of 72 and 23% under 254 and 365nm UV illuminations, respectively. These superior responses might be attributable to the photocarrier generation in UNCD grains accompanied by an efficient carrier transport to the a-C:H matrix.",

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AU - Al-Riyami, Sausan

AU - Yoshitake, Tsuyoshi

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N2 - Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was discussed mainly on the basis of electrical measurements. It was revealed that an a-C:H matrix in UNCD/a-C:H would predominantly be responsible for carrier transportation in the photodiodes. The photodiodes exhibited high external quantum efficiencies of 72 and 23% under 254 and 365nm UV illuminations, respectively. These superior responses might be attributable to the photocarrier generation in UNCD grains accompanied by an efficient carrier transport to the a-C:H matrix.

AB - Carrier transport and photodetection in heterojunction photodiodes comprising n-type Si substrates and p-type B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were investigated. Their transport model was discussed mainly on the basis of electrical measurements. It was revealed that an a-C:H matrix in UNCD/a-C:H would predominantly be responsible for carrier transportation in the photodiodes. The photodiodes exhibited high external quantum efficiencies of 72 and 23% under 254 and 365nm UV illuminations, respectively. These superior responses might be attributable to the photocarrier generation in UNCD grains accompanied by an efficient carrier transport to the a-C:H matrix.

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Carrier transport and photodetection in heterojunction photodiodes comprising n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

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