Carrier generation at ferroelectric phase transitions evidenced in conductivity-overshooting

D. Matsumoto; Y. Urakami; Y. Watanabe; T. Arai; S. W. Cheong

doi:10.1080/00150190802371291

Carrier generation at ferroelectric phase transitions evidenced in conductivity-overshooting

D. Matsumoto, Y. Urakami, Y. Watanabe, T. Arai, S. W. Cheong

Condensed Matter Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

By studying the change of the current through stoichiometric undoped BaTiO₃ with time, we have examined whether the conductivity peaks of BaTiO₃ single crystals near the bulk phase transitions are due to a real conduction of electrons or holes through the samples or the fake current due to ferroelectric domain motion. The difference (δQ) between integrated current at temperatures (388 K and 400 K) above and below T_C exceeds 2P_S. The observation that at 2057s ρ is still evidently enhanced shows that this effect is due to real conduction. Because the charge released by the switching cannot exceed 2P_S ≈ 35 μC/cm² at 388 K.

Original language	English
Pages (from-to)	18-21
Number of pages	4
Journal	Ferroelectrics
Volume	369
Issue number	1 PART 3
DOIs	https://doi.org/10.1080/00150190802371291
Publication status	Published - 2008
Event	11th European Meeting on Ferroelectricity, EMF-2007 - Bled, Slovenia Duration: Sept 3 2007 → Sept 7 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1080/00150190802371291

Cite this

@article{25c8ba510c634ab0898fc5e2a7ce7fd3,

title = "Carrier generation at ferroelectric phase transitions evidenced in conductivity-overshooting",

abstract = "By studying the change of the current through stoichiometric undoped BaTiO3 with time, we have examined whether the conductivity peaks of BaTiO3 single crystals near the bulk phase transitions are due to a real conduction of electrons or holes through the samples or the fake current due to ferroelectric domain motion. The difference (δQ) between integrated current at temperatures (388 K and 400 K) above and below TC exceeds 2PS. The observation that at 2057s ρ is still evidently enhanced shows that this effect is due to real conduction. Because the charge released by the switching cannot exceed 2PS ≈ 35 μC/cm2 at 388 K.",

author = "D. Matsumoto and Y. Urakami and Y. Watanabe and T. Arai and Cheong, {S. W.}",

note = "Funding Information: This work is supported by Grants-in-aids for Scientific Research from JSPS No. 19340084 and CASIO Science Promotion Foundation. Yukio Watanabe is supported partly by Toyota research Institute.; 11th European Meeting on Ferroelectricity, EMF-2007 ; Conference date: 03-09-2007 Through 07-09-2007",

year = "2008",

doi = "10.1080/00150190802371291",

language = "English",

volume = "369",

pages = "18--21",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1 PART 3",

}

TY - JOUR

T1 - Carrier generation at ferroelectric phase transitions evidenced in conductivity-overshooting

AU - Matsumoto, D.

AU - Urakami, Y.

AU - Watanabe, Y.

AU - Arai, T.

AU - Cheong, S. W.

N1 - Funding Information: This work is supported by Grants-in-aids for Scientific Research from JSPS No. 19340084 and CASIO Science Promotion Foundation. Yukio Watanabe is supported partly by Toyota research Institute.

PY - 2008

Y1 - 2008

N2 - By studying the change of the current through stoichiometric undoped BaTiO3 with time, we have examined whether the conductivity peaks of BaTiO3 single crystals near the bulk phase transitions are due to a real conduction of electrons or holes through the samples or the fake current due to ferroelectric domain motion. The difference (δQ) between integrated current at temperatures (388 K and 400 K) above and below TC exceeds 2PS. The observation that at 2057s ρ is still evidently enhanced shows that this effect is due to real conduction. Because the charge released by the switching cannot exceed 2PS ≈ 35 μC/cm2 at 388 K.

AB - By studying the change of the current through stoichiometric undoped BaTiO3 with time, we have examined whether the conductivity peaks of BaTiO3 single crystals near the bulk phase transitions are due to a real conduction of electrons or holes through the samples or the fake current due to ferroelectric domain motion. The difference (δQ) between integrated current at temperatures (388 K and 400 K) above and below TC exceeds 2PS. The observation that at 2057s ρ is still evidently enhanced shows that this effect is due to real conduction. Because the charge released by the switching cannot exceed 2PS ≈ 35 μC/cm2 at 388 K.

UR - http://www.scopus.com/inward/record.url?scp=75449106782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=75449106782&partnerID=8YFLogxK

U2 - 10.1080/00150190802371291

DO - 10.1080/00150190802371291

M3 - Conference article

AN - SCOPUS:75449106782

SN - 0015-0193

VL - 369

SP - 18

EP - 21

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 PART 3

T2 - 11th European Meeting on Ferroelectricity, EMF-2007

Y2 - 3 September 2007 through 7 September 2007

ER -

Carrier generation at ferroelectric phase transitions evidenced in conductivity-overshooting

Abstract

All Science Journal Classification (ASJC) codes

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