TY - JOUR
T1 - Carrier doping in the type VIII clathrate Ba 8Ga 16Sn 30 through Sb substitution
AU - Kono, Yasushi
AU - Ohya, Nobuyuki
AU - Saiga, Yuhta
AU - Suekuni, Koichiro
AU - Takabatake, Toshiro
AU - Akai, Koji
AU - Yamamoto, Setsuo
N1 - Funding Information:
The authors would like to acknowledge the PC cluster resources of the Media and Information Technology Center, Yamaguchi University, for the calculation of the electronic structure and thermoelectric properties. This work is partially supported by New Energy and Industrial Technology Development Organization (NEDO), Japan.
PY - 2011/5
Y1 - 2011/5
N2 - The type VIII clathrate Ba 8Ga 16Sn 30 has a relatively high figure of merit (ZT) from 200°C to 400°C. Our previous calculations showed that the optimum carrier concentration for high ZT is on the order of 10 20/cm 3 for both p- and n-type samples. The ZT value exceeds unity for the n-type material. However, actual carrier concentrations for synthesized samples were on the order of 10 19/cm 3. With the aim of increasing the carrier concentration, we have synthesized single crystals of Sb-doped Ba 8Ga 16Sn 30. Contrary to our expectation, the Ga content in the crystal increased with the increase in Sb content. In both p- and n-type samples, the carrier concentration was increased, and the power factor for the p-type samples was improved to 1.4 × 10 -2 W/mK 2. These results are discussed in relation to the change in the band structure.
AB - The type VIII clathrate Ba 8Ga 16Sn 30 has a relatively high figure of merit (ZT) from 200°C to 400°C. Our previous calculations showed that the optimum carrier concentration for high ZT is on the order of 10 20/cm 3 for both p- and n-type samples. The ZT value exceeds unity for the n-type material. However, actual carrier concentrations for synthesized samples were on the order of 10 19/cm 3. With the aim of increasing the carrier concentration, we have synthesized single crystals of Sb-doped Ba 8Ga 16Sn 30. Contrary to our expectation, the Ga content in the crystal increased with the increase in Sb content. In both p- and n-type samples, the carrier concentration was increased, and the power factor for the p-type samples was improved to 1.4 × 10 -2 W/mK 2. These results are discussed in relation to the change in the band structure.
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U2 - 10.1007/s11664-011-1590-4
DO - 10.1007/s11664-011-1590-4
M3 - Article
AN - SCOPUS:79955897019
SN - 0361-5235
VL - 40
SP - 845
EP - 850
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 5
ER -