Carrier compensation in O+ implanted n-type GaAs

T. Asano; P. L.F. Hemment

doi:10.1016/0038-1101(80)90191-4

Carrier compensation in O⁺ implanted n-type GaAs

T. Asano
, P. L.F. Hemment

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Results of electrical measurements on 1 MeV O⁺ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.

Original language	English
Pages (from-to)	1089-1090
Number of pages	2
Journal	Solid-State Electronics
Volume	23
Issue number	10
DOIs	https://doi.org/10.1016/0038-1101(80)90191-4
Publication status	Published - 1980
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/0038-1101(80)90191-4

Cite this

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title = "Carrier compensation in O+ implanted n-type GaAs",

abstract = "Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.",

author = "T. Asano and Hemment, \{P. L.F.\}",

year = "1980",

doi = "10.1016/0038-1101(80)90191-4",

language = "English",

volume = "23",

pages = "1089--1090",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "10",

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TY - JOUR

T1 - Carrier compensation in O+ implanted n-type GaAs

AU - Asano, T.

AU - Hemment, P. L.F.

PY - 1980

Y1 - 1980

N2 - Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.

AB - Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.

UR - https://www.scopus.com/pages/publications/84983829325

UR - https://www.scopus.com/pages/publications/84983829325#tab=citedBy

U2 - 10.1016/0038-1101(80)90191-4

DO - 10.1016/0038-1101(80)90191-4

M3 - Article

AN - SCOPUS:84983829325

SN - 0038-1101

VL - 23

SP - 1089

EP - 1090

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

Carrier compensation in O⁺ implanted n-type GaAs

Abstract

All Science Journal Classification (ASJC) codes

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