Carrier compensation in O+ implanted n-type GaAs

T. Asano, P. L.F. Hemment

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Results of electrical measurements on 1 MeV O+ implanted n-type GaAs are reported. After annealing the implanted material it is found that the free carrier compenasation rate (k), defined by Favennec[1] as the number of carriers removed per oxygen atom, can be dependent upon both the starting material and the implanted dose.

Original languageEnglish
Pages (from-to)1089-1090
Number of pages2
JournalSolid-State Electronics
Issue number10
Publication statusPublished - 1980
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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