Carbonization of SIMOX substrates for fabrication of single-crystal SiC-on-insulator

S. Harada, M. Arita, Y. Ikoma, T. Motooka

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    We have developed a new method for fabrication of single-crystal SiC-on-insulator using SIMOX (Separation by IMplanted OXygen) substrates. Carbonization of surface Si of SIMOX wafers induced cavities between the SiC and Si layers which resulted in low-quality SiC-on-insulator. On the other hand, crystalline SiC layers were formed on SIMOX substrates without cavities at SiC/Si interfaces by using CVD of SiC on as-implanted SIMOX substrates at 900 °C followed by N2 annealing at 1350 °C.

    Original languageEnglish
    Pages (from-to)297-300
    JournalMaterials Science Forum
    Volume338-342
    Publication statusPublished - 2000
    EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
    Duration: Oct 10 1999Oct 15 1999

    All Science Journal Classification (ASJC) codes

    • General Materials Science
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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