TY - GEN
T1 - Calculation of lattice constant of 4H-SiC as a function of impurity concentration
AU - Matsumoto, Tsubasa
AU - Nishizawa, Shin Ichi
AU - Yamasaki, Satoshi
PY - 2010
Y1 - 2010
N2 - Calculations of lattice constant of 4H-SiC and diamond have been carried out. Lattice constant of 4H-SiC trends to decrease when nitrogen concentration increases. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Lattice constant of boron and phosphorus doped diamond trends to increase when impurity concentration increases. The effect of phosphorus on diamond lattice constant is about six times larger than that of boron.
AB - Calculations of lattice constant of 4H-SiC and diamond have been carried out. Lattice constant of 4H-SiC trends to decrease when nitrogen concentration increases. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Lattice constant of boron and phosphorus doped diamond trends to increase when impurity concentration increases. The effect of phosphorus on diamond lattice constant is about six times larger than that of boron.
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U2 - 10.4028/www.scientific.net/MSF.645-648.247
DO - 10.4028/www.scientific.net/MSF.645-648.247
M3 - Conference contribution
AN - SCOPUS:77955461365
SN - 0878492798
SN - 9780878492794
T3 - Materials Science Forum
SP - 247
EP - 250
BT - Silicon Carbide and Related Materials 2009
PB - Trans Tech Publications Ltd
T2 - 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Y2 - 11 October 2009 through 16 October 2009
ER -