Bulk and surface effects on the polytype stability in SiC crystals

Frédéric Mercier, Shin ichi Nishizawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated with ab initio calculations the 3C-, 6H-, 4H- and 2H-SiC polytypes. We discuss the geometry and the energetics of bulk and surface relaxed structures ((0001) Si face and the (000̄1) C face surfaces). The polytype stability is discussed regarding the bulk and surface effects.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages41-44
Number of pages4
ISBN (Print)9783037854198
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sept 11 2011Sept 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Country/TerritoryUnited States
CityCleveland, OH
Period9/11/119/16/11

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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