Border-trap characterization for Ge gate stacks with Thin GeOx layer using deep-level transient spectroscopy

Hiroshi Nakashima; Wei Chen Wen; Keisuke Yamamoto; Dong Wang

doi:10.1149/09805.0395ecst

Border-trap characterization for Ge gate stacks with Thin GeO_x layer using deep-level transient spectroscopy

Hiroshi Nakashima, Wei Chen Wen, Keisuke Yamamoto, Dong Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The deep-level transient spectroscopy (DLTS) measurements for the SiO2/GeO2/Ge gate stacks represent the different pulse height dependences of the border trap (BT) signals for p- and n-MOSCAPs. We propose the tunneling models to/from BT in GeO2 to explain the difference. Based on this model, the BTs in Al2O3/GeOx/p-Ge gate stacks were characterized using DLTS. Through evaluating the gate stacks with different GeOx thickness, the respective BTs in Al2O3, Al2O3/GeOx interface region, and GeOx were detected. The density of BT (Nbt) in Al2O3 (6~9 × 10¹⁷ cm^-3) is lower than those in GeOx (~2 × 10¹⁸ cm^-3), and the highest Nbt (~1 × 10¹⁹ cm^-3) was found in Al2O3/GeOx interface region. Ge p-MOSFETs with Al2O3/GeOx/pGe gate stacks were fabricated and analyzed. We confirmed that the ITs and the BTs near to valence band edge of Ge affect the effective mobility of Ge p-MOSFETs in high field region.

Original language	English
Title of host publication	PRiME 2020
Subtitle of host publication	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9
Editors	Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai
Publisher	IOP Publishing Ltd.
Pages	395-404
Number of pages	10
Edition	5
ISBN (Electronic)	9781607689003
DOIs	https://doi.org/10.1149/09805.0395ecst
Publication status	Published - 2020
Event	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States Duration: Oct 4 2020 → Oct 9 2020

Publication series

Name	ECS Transactions
Number	5
Volume	98
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/Territory	United States
City	Honolulu
Period	10/4/20 → 10/9/20

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/09805.0395ecst

Cite this

Nakashima, H., Wen, W. C., Yamamoto, K., & Wang, D. (2020). Border-trap characterization for Ge gate stacks with Thin GeO_x layer using deep-level transient spectroscopy. In Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, & A. Mai (Eds.), PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9 (5 ed., pp. 395-404). Article 395 (ECS Transactions; Vol. 98, No. 5). IOP Publishing Ltd.. https://doi.org/10.1149/09805.0395ecst

Border-trap characterization for Ge gate stacks with Thin GeO_x layer using deep-level transient spectroscopy. / Nakashima, Hiroshi; Wen, Wei Chen; Yamamoto, Keisuke et al.
PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. ed. / Q. Liu; J. M. Hartmann; J. R. Holt; X. Gong; V. Jain; G. Niu; G. Masini; A. Ogura; S. Miyazaki; M. Ostling; W. Bi; A. Schulze; A. Mai. 5. ed. IOP Publishing Ltd., 2020. p. 395-404 395 (ECS Transactions; Vol. 98, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakashima, H, Wen, WC, Yamamoto, K & Wang, D 2020, Border-trap characterization for Ge gate stacks with Thin GeO_x layer using deep-level transient spectroscopy. in Q Liu, JM Hartmann, JR Holt, X Gong, V Jain, G Niu, G Masini, A Ogura, S Miyazaki, M Ostling, W Bi, A Schulze & A Mai (eds), PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. 5 edn, 395, ECS Transactions, no. 5, vol. 98, IOP Publishing Ltd., pp. 395-404, Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, United States, 10/4/20. https://doi.org/10.1149/09805.0395ecst

Nakashima H, Wen WC, Yamamoto K , Wang D. Border-trap characterization for Ge gate stacks with Thin GeO_x layer using deep-level transient spectroscopy. In Liu Q, Hartmann JM, Holt JR, Gong X, Jain V, Niu G, Masini G, Ogura A, Miyazaki S, Ostling M, Bi W, Schulze A, Mai A, editors, PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. 5 ed. IOP Publishing Ltd. 2020. p. 395-404. 395. (ECS Transactions; 5). doi: 10.1149/09805.0395ecst

Nakashima, Hiroshi ; Wen, Wei Chen ; Yamamoto, Keisuke et al. / Border-trap characterization for Ge gate stacks with Thin GeO_x layer using deep-level transient spectroscopy. PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. editor / Q. Liu ; J. M. Hartmann ; J. R. Holt ; X. Gong ; V. Jain ; G. Niu ; G. Masini ; A. Ogura ; S. Miyazaki ; M. Ostling ; W. Bi ; A. Schulze ; A. Mai. 5. ed. IOP Publishing Ltd., 2020. pp. 395-404 (ECS Transactions; 5).

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title = "Border-trap characterization for Ge gate stacks with Thin GeOx layer using deep-level transient spectroscopy",

abstract = "The deep-level transient spectroscopy (DLTS) measurements for the SiO2/GeO2/Ge gate stacks represent the different pulse height dependences of the border trap (BT) signals for p- and n-MOSCAPs. We propose the tunneling models to/from BT in GeO2 to explain the difference. Based on this model, the BTs in Al2O3/GeOx/p-Ge gate stacks were characterized using DLTS. Through evaluating the gate stacks with different GeOx thickness, the respective BTs in Al2O3, Al2O3/GeOx interface region, and GeOx were detected. The density of BT (Nbt) in Al2O3 (6~9 × 1017 cm-3) is lower than those in GeOx (~2 × 1018 cm-3), and the highest Nbt (~1 × 1019 cm-3) was found in Al2O3/GeOx interface region. Ge p-MOSFETs with Al2O3/GeOx/pGe gate stacks were fabricated and analyzed. We confirmed that the ITs and the BTs near to valence band edge of Ge affect the effective mobility of Ge p-MOSFETs in high field region.",

author = "Hiroshi Nakashima and Wen, {Wei Chen} and Keisuke Yamamoto and Dong Wang",

note = "Funding Information: This work was partially supported by (JSPS) KAKENHI (grant numbers 17H03237 and 18KK0134) and Advanced Graduate Program in Global Strategy for Green Asia, Kyushu University. XPS measurements were carried out using the facilities of the Center of Advanced Instrumental Analysis of Kyushu University. Ion implantation was carried out in Center for Microelectronic System, Kyushu Institute of Technology. Publisher Copyright: {\textcopyright} The Electrochemical Society; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",

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N1 - Funding Information: This work was partially supported by (JSPS) KAKENHI (grant numbers 17H03237 and 18KK0134) and Advanced Graduate Program in Global Strategy for Green Asia, Kyushu University. XPS measurements were carried out using the facilities of the Center of Advanced Instrumental Analysis of Kyushu University. Ion implantation was carried out in Center for Microelectronic System, Kyushu Institute of Technology. Publisher Copyright: © The Electrochemical Society

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N2 - The deep-level transient spectroscopy (DLTS) measurements for the SiO2/GeO2/Ge gate stacks represent the different pulse height dependences of the border trap (BT) signals for p- and n-MOSCAPs. We propose the tunneling models to/from BT in GeO2 to explain the difference. Based on this model, the BTs in Al2O3/GeOx/p-Ge gate stacks were characterized using DLTS. Through evaluating the gate stacks with different GeOx thickness, the respective BTs in Al2O3, Al2O3/GeOx interface region, and GeOx were detected. The density of BT (Nbt) in Al2O3 (6~9 × 1017 cm-3) is lower than those in GeOx (~2 × 1018 cm-3), and the highest Nbt (~1 × 1019 cm-3) was found in Al2O3/GeOx interface region. Ge p-MOSFETs with Al2O3/GeOx/pGe gate stacks were fabricated and analyzed. We confirmed that the ITs and the BTs near to valence band edge of Ge affect the effective mobility of Ge p-MOSFETs in high field region.

AB - The deep-level transient spectroscopy (DLTS) measurements for the SiO2/GeO2/Ge gate stacks represent the different pulse height dependences of the border trap (BT) signals for p- and n-MOSCAPs. We propose the tunneling models to/from BT in GeO2 to explain the difference. Based on this model, the BTs in Al2O3/GeOx/p-Ge gate stacks were characterized using DLTS. Through evaluating the gate stacks with different GeOx thickness, the respective BTs in Al2O3, Al2O3/GeOx interface region, and GeOx were detected. The density of BT (Nbt) in Al2O3 (6~9 × 1017 cm-3) is lower than those in GeOx (~2 × 1018 cm-3), and the highest Nbt (~1 × 1019 cm-3) was found in Al2O3/GeOx interface region. Ge p-MOSFETs with Al2O3/GeOx/pGe gate stacks were fabricated and analyzed. We confirmed that the ITs and the BTs near to valence band edge of Ge affect the effective mobility of Ge p-MOSFETs in high field region.

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