Abstract
An ambipolar light-emitting organic field-effect transistor (LE-OFET) based on a 1,4-Bis(4-methylstyryl)benzene (BSB-Me) single crystal was developed. The BSB-Me single crystal has very high photoluminescence quantum efficiency (φPL) of 89 ± 2%, while φPL of the BSB-Me vapor-deposited film is limited to a much lower value of 54 ± 2%. Ambipolar operation with successive blue electroluminescence from the FETs based on the BSB-Me single crystals was demonstrated by realizing nearly equal electron and hole mobilities [about 0.005 cm2/(Vs)] with asymmetric gold-calcium contacts. Since BSB-Me single crystals can perform light amplification, the BSB-Me-based ambipolar LE-OFET is a promising candidate for future electrically driven organic blue-emitting solid-state lasers.
Original language | English |
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Pages (from-to) | 918011-918013 |
Number of pages | 3 |
Journal | Applied Physics Express |
Volume | 1 |
Issue number | 9 |
DOIs | |
Publication status | Published - Sept 1 2008 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)