Bandwidth enhancement for high speed amplifier utilizing mutually coupled on-chip inductors

Akira Tsuchiya; Takeshi Kuboki; Yusuke Ohtomo; Keiji Kishine; Shigekazu Miyawaki; Makoto Nakamura; Hidetoshi Onodera

doi:10.1109/isocc.2011.6138640

Bandwidth enhancement for high speed amplifier utilizing mutually coupled on-chip inductors

Akira Tsuchiya, Takeshi Kuboki, Yusuke Ohtomo, Keiji Kishine, Shigekazu Miyawaki, Makoto Nakamura, Hidetoshi Onodera

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper discusses bandwidth enhancement technique for high speed amplifier. Inductive peaking is a common practice for bandwidth enhancement, however the area occupied by on-chip inductors is a heavy disadvantage. We utilize mutually coupled inductors for effective inductive peaking. A Laser-Diode (LD) driver for optical communication system is designed in a 0.18μm CMOS. Measurement results show that the mutually coupled inductor can achieve 16Gbps operation and 26% area reduction compared to conventional shunt peaking.

Original language	English
Title of host publication	2011 International SoC Design Conference, ISOCC 2011
Publisher	IEEE Computer Society
Pages	36-39
Number of pages	4
ISBN (Print)	9781457707100
DOIs	https://doi.org/10.1109/isocc.2011.6138640
Publication status	Published - 2011
Externally published	Yes
Event	8th International SoC Design Conference 2011, ISOCC 2011 - Jeju, Korea, Republic of Duration: Nov 17 2011 → Nov 18 2011

Publication series

Name	2011 International SoC Design Conference, ISOCC 2011

Other

Other	8th International SoC Design Conference 2011, ISOCC 2011
Country/Territory	Korea, Republic of
City	Jeju
Period	11/17/11 → 11/18/11

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/isocc.2011.6138640

Cite this

Tsuchiya, A., Kuboki, T., Ohtomo, Y., Kishine, K., Miyawaki, S., Nakamura, M., & Onodera, H. (2011). Bandwidth enhancement for high speed amplifier utilizing mutually coupled on-chip inductors. In 2011 International SoC Design Conference, ISOCC 2011 (pp. 36-39). (2011 International SoC Design Conference, ISOCC 2011). IEEE Computer Society. https://doi.org/10.1109/isocc.2011.6138640

Bandwidth enhancement for high speed amplifier utilizing mutually coupled on-chip inductors. / Tsuchiya, Akira; Kuboki, Takeshi; Ohtomo, Yusuke et al.
2011 International SoC Design Conference, ISOCC 2011. IEEE Computer Society, 2011. p. 36-39 (2011 International SoC Design Conference, ISOCC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsuchiya, A, Kuboki, T, Ohtomo, Y, Kishine, K, Miyawaki, S, Nakamura, M & Onodera, H 2011, Bandwidth enhancement for high speed amplifier utilizing mutually coupled on-chip inductors. in 2011 International SoC Design Conference, ISOCC 2011. 2011 International SoC Design Conference, ISOCC 2011, IEEE Computer Society, pp. 36-39, 8th International SoC Design Conference 2011, ISOCC 2011, Jeju, Korea, Republic of, 11/17/11. https://doi.org/10.1109/isocc.2011.6138640

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abstract = "This paper discusses bandwidth enhancement technique for high speed amplifier. Inductive peaking is a common practice for bandwidth enhancement, however the area occupied by on-chip inductors is a heavy disadvantage. We utilize mutually coupled inductors for effective inductive peaking. A Laser-Diode (LD) driver for optical communication system is designed in a 0.18μm CMOS. Measurement results show that the mutually coupled inductor can achieve 16Gbps operation and 26% area reduction compared to conventional shunt peaking.",

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isbn = "9781457707100",

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AU - Miyawaki, Shigekazu

AU - Nakamura, Makoto

AU - Onodera, Hidetoshi

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AB - This paper discusses bandwidth enhancement technique for high speed amplifier. Inductive peaking is a common practice for bandwidth enhancement, however the area occupied by on-chip inductors is a heavy disadvantage. We utilize mutually coupled inductors for effective inductive peaking. A Laser-Diode (LD) driver for optical communication system is designed in a 0.18μm CMOS. Measurement results show that the mutually coupled inductor can achieve 16Gbps operation and 26% area reduction compared to conventional shunt peaking.

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PB - IEEE Computer Society

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ER -

Bandwidth enhancement for high speed amplifier utilizing mutually coupled on-chip inductors

Abstract

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All Science Journal Classification (ASJC) codes

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