Band alignment of InGaZnO 4/Si interface by hard x-ray photoelectron spectroscopy

Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Eiji Ikenaga, Takeharu Sugiyama, Keisuke Kobayashi, Hideo Hosono

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41 Citations (Scopus)


Although amorphous InGaZnO 4 has intensively been studied for a semiconductor channel material of thin-film transistors in next-generation flat-panel displays, its electronic structure parameters have not been reported. In this work, the electron affinities (χ) and the ionization potentials (I p) of crystalline and amorphous InGaZnO 4 (c-IGZO and a-IGZO) were measured using bulk-sensitive hard x-ray photoelectron spectroscopy. First, the χ and I p values of c-IGZO and a-IGZO thin films were estimated by aligning the Zn 2p 3/2 core level energies to a literature value for ZnO, which provided χ 3.90 eV and I p 7.58 eV for c-IGZO and 4.31 eV and 7.41 eV for a-IGZO. It was also confirmed that the escape depth of the photoelectrons excited by the photon energy of 5950.2 eV is 3.3 nm for a-IGZO and large enough for directly measuring the interface electronic structure using a-IGZO/c-Si heterojunctions. It provided the valence band offset of ∼2.3 eV, which agrees well with the above data. The present results substantiate that the a-IGZO/c-Si interface follows well the Schottky-Mott rule.

Original languageEnglish
Article number033713
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - Aug 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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