TY - JOUR
T1 - Ba8 Ga16 Sn30 with type-I clathrate structure
T2 - Drastic suppression of heat conduction
AU - Avila, M. A.
AU - Suekuni, K.
AU - Umeo, K.
AU - Fukuoka, H.
AU - Yamanaka, S.
AU - Takabatake, T.
N1 - Funding Information:
We are thankful to D. Huo and T. Sakata for fruitful discussions. This work was financially supported by the Grants in Aid for Scientific Research (A) (Grant No. 18204032) and the priority area “Skutterudite” (Grant No. 15072205) from MEXT, Japan.
PY - 2008
Y1 - 2008
N2 - For the past decade, intermetallic clathrates have been rattling their way into mainstream research in thermoelectrics. The unusual vibrations of their guest ions inside oversized cages interfere with the cage phonons while leaving the electronic flow intact, providing an exotic way to achieve a best-of-both-worlds scenario in terms of electrical and thermal transport in the same material. Here, we present the structural and thermoelectric properties of Ba8 Ga16 Sn30 single crystals grown in the type-I clathrate structure (ß-BGS), showing one of the lowest recorded thermal conductivities κ (T) for any bulk compound, while still behaving electronically as a heavily doped n -type semiconducting crystal.
AB - For the past decade, intermetallic clathrates have been rattling their way into mainstream research in thermoelectrics. The unusual vibrations of their guest ions inside oversized cages interfere with the cage phonons while leaving the electronic flow intact, providing an exotic way to achieve a best-of-both-worlds scenario in terms of electrical and thermal transport in the same material. Here, we present the structural and thermoelectric properties of Ba8 Ga16 Sn30 single crystals grown in the type-I clathrate structure (ß-BGS), showing one of the lowest recorded thermal conductivities κ (T) for any bulk compound, while still behaving electronically as a heavily doped n -type semiconducting crystal.
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U2 - 10.1063/1.2831926
DO - 10.1063/1.2831926
M3 - Article
AN - SCOPUS:38849096624
SN - 0003-6951
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 041901
ER -