AUTOMATIC THICKNESS MEASUREMENT OF A SINGLE Si CRYSTAL ISLAND SURROUNDED BY SiO//2 DIELECTRIC FILM AND POLYSILICON LAYER.

Renshi Sawada; Toshiroh Karaki; Junji Watanabe

AUTOMATIC THICKNESS MEASUREMENT OF A SINGLE Si CRYSTAL ISLAND SURROUNDED BY SiO//2 DIELECTRIC FILM AND POLYSILICON LAYER.

Renshi Sawada, Toshiroh Karaki, Junji Watanabe

Research output: Contribution to journal › Article › peer-review

Abstract

A method and instrument for thickness measurement of a single Si crystal island in a compounded substrate consisting of a single Si crystal surrounded by SiO//2 dielectric film and polysilicon layer, the so-called dielectric insulation wafer, are described. The measuring instrument to which the Lichtschnitt method is applied, using an infrared slit beam, provided satisfactory accuracy within plus or minus 1. 5 mu m for the island thickness range from 10 to 400 mu m.

Original language	English
Pages (from-to)	293-298
Number of pages	6
Journal	Bulletin of the Japan Society of Precision Engineering
Volume	18
Issue number	4
Publication status	Published - Dec 1 1984

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

@article{43b62d3b214948daa3747c2bcc6bf07c,

title = "AUTOMATIC THICKNESS MEASUREMENT OF A SINGLE Si CRYSTAL ISLAND SURROUNDED BY SiO//2 DIELECTRIC FILM AND POLYSILICON LAYER.",

abstract = "A method and instrument for thickness measurement of a single Si crystal island in a compounded substrate consisting of a single Si crystal surrounded by SiO//2 dielectric film and polysilicon layer, the so-called dielectric insulation wafer, are described. The measuring instrument to which the Lichtschnitt method is applied, using an infrared slit beam, provided satisfactory accuracy within plus or minus 1. 5 mu m for the island thickness range from 10 to 400 mu m.",

author = "Renshi Sawada and Toshiroh Karaki and Junji Watanabe",

year = "1984",

month = dec,

day = "1",

language = "English",

volume = "18",

pages = "293--298",

journal = "Bulletin of the Japan Society of Precision Engineering",

issn = "0582-4206",

publisher = "Japan Society for Precision Engineering",

number = "4",

}

TY - JOUR

T1 - AUTOMATIC THICKNESS MEASUREMENT OF A SINGLE Si CRYSTAL ISLAND SURROUNDED BY SiO//2 DIELECTRIC FILM AND POLYSILICON LAYER.

AU - Sawada, Renshi

AU - Karaki, Toshiroh

AU - Watanabe, Junji

PY - 1984/12/1

Y1 - 1984/12/1

N2 - A method and instrument for thickness measurement of a single Si crystal island in a compounded substrate consisting of a single Si crystal surrounded by SiO//2 dielectric film and polysilicon layer, the so-called dielectric insulation wafer, are described. The measuring instrument to which the Lichtschnitt method is applied, using an infrared slit beam, provided satisfactory accuracy within plus or minus 1. 5 mu m for the island thickness range from 10 to 400 mu m.

AB - A method and instrument for thickness measurement of a single Si crystal island in a compounded substrate consisting of a single Si crystal surrounded by SiO//2 dielectric film and polysilicon layer, the so-called dielectric insulation wafer, are described. The measuring instrument to which the Lichtschnitt method is applied, using an infrared slit beam, provided satisfactory accuracy within plus or minus 1. 5 mu m for the island thickness range from 10 to 400 mu m.

UR - http://www.scopus.com/inward/record.url?scp=0021587223&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021587223&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021587223

SN - 0582-4206

VL - 18

SP - 293

EP - 298

JO - Bulletin of the Japan Society of Precision Engineering

JF - Bulletin of the Japan Society of Precision Engineering

IS - 4

ER -

AUTOMATIC THICKNESS MEASUREMENT OF A SINGLE Si CRYSTAL ISLAND SURROUNDED BY SiO//2 DIELECTRIC FILM AND POLYSILICON LAYER.

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this