Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process

Jong Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh Sadoh

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37 Citations (Scopus)


Au-induced crystallization of Si through a layer-exchange process has been investigated to achieve poly-Si films on insulators at low-temperatures (∼250°C). By annealing (250-350°C) of amorphous Si (a-Si)/Au stacked structures formed on insulators, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. This Au-induced layer-exchange growth technique at low-temperatures (∼250°C) should be very useful to obtain poly-Si films on flexible substrates, which are employed as template layers for growth of high quality Si1-xGex (x: 0-1) films to realize flexible high-speed thin-film transistors and flexible high-efficiency solar cells.

Original languageEnglish
Pages (from-to)H232-H234
JournalElectrochemical and Solid-State Letters
Issue number6
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • Electrical and Electronic Engineering
  • General Materials Science
  • Electrochemistry
  • Physical and Theoretical Chemistry


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