Atomistic observation of electron irradiation-induced defects in CeO 2

Seiya Takaki, Tomokazu Yamamoto, Masanori Kutsuwada, Kazuhiro Yasuda, Syo Matsumura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


We have investigated the atomistic structure of radiation-induced defects in CeCO2 formed under 200 keV electron irradiation. Dislocation loops on {111} habit planes are observed, and they grow accompanying strong strain-field. Atomic resolution scanning transmission electron microscopy (STEM) observations with high angle annular dark-field (HAADF) and annular bright-field (ABF) imaging techniques showed that no additional Ce layers are inserted at the position of the dislocation loop, and that strong distortion and expansion is induced around the dislocation loops. These results are discussed that dislocation loops formed under electron irradiation are non-stoichiometric defects consist of oxygen interstitials.

Original languageEnglish
Title of host publicationAdvances in Materials for Nuclear Energy
Number of pages6
Publication statusPublished - 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012Nov 30 2012

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2012 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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