@inbook{85a56cc22dcd40f888e4edd6b8e0a76d,
title = "Atomic arrangement and in composition in InGaN quantum wells",
abstract = "In this section, atomic arrangement and indium incorporation in InGaN epitaxial layers are discussed. Chichibu et al. have studied why In-containing (Al, In, Ga)N films exhibit a defect-insensitive emission probability.",
author = "Yoshihiro Kangawa",
note = "Publisher Copyright: {\textcopyright} 2018, Springer International Publishing AG, part of Springer Nature.",
year = "2018",
doi = "10.1007/978-3-319-76641-6_6",
language = "English",
series = "Springer Series in Materials Science",
publisher = "Springer Verlag",
pages = "109--124",
booktitle = "Springer Series in Materials Science",
address = "Germany",
}