Atom-probe study of the initial stage of silicide formation

Osamu Nishikawa; Yoshitaka Tsunashima; Eiichi Nomura; Minoru Wada; Shiro Horie; Mezame Shibata; Toshihiko Yoshimura; Ryuji Uemori

doi:10.1016/0039-6028(83)90753-7

Atom-probe study of the initial stage of silicide formation

Osamu Nishikawa, Yoshitaka Tsunashima, Eiichi Nomura, Minoru Wada, Shiro Horie, Mezame Shibata, Toshihiko Yoshimura, Ryuji Uemori

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The initial stage of silicide formation was investigated utilizing the high mass resolution atom probe. Silicon-deposited Ni and W specimen tips were heated to various temperatures in a vacuum of 10^-7 Pa. A highly ordered image, which agreed well with the computer-simulated image of WSi₂ with the C11b structure, was observed after heating the tip to 950 K. Ni formed a mixed layer with Si even at 80 K. The depth profile of the silicide composition changed with temperature due to a high diffusibility of Ni. The silicide formed above 900 K consistently showed a well-ordered image corresponding to a cubic structure, while its composition varied from Ni₃Si₂ to NiSi with depth. The computer-simulated image suggests that the observed ordered structure could be a modified Cl structure. The evaporation field of the ordered silicide was found to be significantly higher than those of pure Ni and Si, possibly due to a strong binding between the constituent atoms.

Original language	English
Pages (from-to)	529-533
Number of pages	5
Journal	Surface Science
Volume	126
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(83)90753-7
Publication status	Published - Mar 2 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/0039-6028(83)90753-7

Cite this

@article{cba1e6a89f9248a18c60a1e14ed271c9,

title = "Atom-probe study of the initial stage of silicide formation",

abstract = "The initial stage of silicide formation was investigated utilizing the high mass resolution atom probe. Silicon-deposited Ni and W specimen tips were heated to various temperatures in a vacuum of 10-7 Pa. A highly ordered image, which agreed well with the computer-simulated image of WSi2 with the C11b structure, was observed after heating the tip to 950 K. Ni formed a mixed layer with Si even at 80 K. The depth profile of the silicide composition changed with temperature due to a high diffusibility of Ni. The silicide formed above 900 K consistently showed a well-ordered image corresponding to a cubic structure, while its composition varied from Ni3Si2 to NiSi with depth. The computer-simulated image suggests that the observed ordered structure could be a modified Cl structure. The evaporation field of the ordered silicide was found to be significantly higher than those of pure Ni and Si, possibly due to a strong binding between the constituent atoms.",

author = "Osamu Nishikawa and Yoshitaka Tsunashima and Eiichi Nomura and Minoru Wada and Shiro Horie and Mezame Shibata and Toshihiko Yoshimura and Ryuji Uemori",

year = "1983",

month = mar,

day = "2",

doi = "10.1016/0039-6028(83)90753-7",

language = "English",

volume = "126",

pages = "529--533",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Atom-probe study of the initial stage of silicide formation

AU - Nishikawa, Osamu

AU - Tsunashima, Yoshitaka

AU - Nomura, Eiichi

AU - Wada, Minoru

AU - Horie, Shiro

AU - Shibata, Mezame

AU - Yoshimura, Toshihiko

AU - Uemori, Ryuji

PY - 1983/3/2

Y1 - 1983/3/2

N2 - The initial stage of silicide formation was investigated utilizing the high mass resolution atom probe. Silicon-deposited Ni and W specimen tips were heated to various temperatures in a vacuum of 10-7 Pa. A highly ordered image, which agreed well with the computer-simulated image of WSi2 with the C11b structure, was observed after heating the tip to 950 K. Ni formed a mixed layer with Si even at 80 K. The depth profile of the silicide composition changed with temperature due to a high diffusibility of Ni. The silicide formed above 900 K consistently showed a well-ordered image corresponding to a cubic structure, while its composition varied from Ni3Si2 to NiSi with depth. The computer-simulated image suggests that the observed ordered structure could be a modified Cl structure. The evaporation field of the ordered silicide was found to be significantly higher than those of pure Ni and Si, possibly due to a strong binding between the constituent atoms.

AB - The initial stage of silicide formation was investigated utilizing the high mass resolution atom probe. Silicon-deposited Ni and W specimen tips were heated to various temperatures in a vacuum of 10-7 Pa. A highly ordered image, which agreed well with the computer-simulated image of WSi2 with the C11b structure, was observed after heating the tip to 950 K. Ni formed a mixed layer with Si even at 80 K. The depth profile of the silicide composition changed with temperature due to a high diffusibility of Ni. The silicide formed above 900 K consistently showed a well-ordered image corresponding to a cubic structure, while its composition varied from Ni3Si2 to NiSi with depth. The computer-simulated image suggests that the observed ordered structure could be a modified Cl structure. The evaporation field of the ordered silicide was found to be significantly higher than those of pure Ni and Si, possibly due to a strong binding between the constituent atoms.

UR - http://www.scopus.com/inward/record.url?scp=3042908676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042908676&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(83)90753-7

DO - 10.1016/0039-6028(83)90753-7

M3 - Article

AN - SCOPUS:3042908676

SN - 0039-6028

VL - 126

SP - 529

EP - 533

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Atom-probe study of the initial stage of silicide formation

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this