ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. II. Ni-Si SYSTEM.

Osamu Nishikawa; Eiichi Nomura; Minoru Wada; Yoshitaka Tsunashima; Shiro Horie; Mezame Shibata; Toshihiko Yoshimura; Ryuji Uemori

doi:10.1116/1.582533

ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. II. Ni-Si SYSTEM.

Osamu Nishikawa, Eiichi Nomura, Minoru Wada, Yoshitaka Tsunashima, Shiro Horie, Mezame Shibata, Toshihiko Yoshimura, Ryuji Uemori

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Silicon-deposited Ni tips were heated at various temperatures up to 1000 K and structures and compositions of thin Ni silicide layers formed in situ were investigated by the atom probe and the field ion microscope (FIM). Although a mixed layer of Ni and Si was formed even at 80 K, FIM images of an ordered silicide structure were observed after heating the tip above 900 K. It was noticed that the evaporation field of the ordered silicide is significantly higher than those of Ni and Si, possibly due to a strong binding force among the constituting atoms. Since Ni is the major moving species, the Ni concentrations in the thin silicide layers were found to be as high as Ni//4Si near the surface and decreased to NiSi at the boundary of the silicide and the substrate Ni.

Original language	English
Pages (from-to)	10-14
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	1
Issue number	1
DOIs	https://doi.org/10.1116/1.582533
Publication status	Published - 1983
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.582533

Cite this

@article{17bc3af51a0a4b1d9fd5d418fc905026,

title = "ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. II. Ni-Si SYSTEM.",

abstract = "Silicon-deposited Ni tips were heated at various temperatures up to 1000 K and structures and compositions of thin Ni silicide layers formed in situ were investigated by the atom probe and the field ion microscope (FIM). Although a mixed layer of Ni and Si was formed even at 80 K, FIM images of an ordered silicide structure were observed after heating the tip above 900 K. It was noticed that the evaporation field of the ordered silicide is significantly higher than those of Ni and Si, possibly due to a strong binding force among the constituting atoms. Since Ni is the major moving species, the Ni concentrations in the thin silicide layers were found to be as high as Ni//4Si near the surface and decreased to NiSi at the boundary of the silicide and the substrate Ni.",

author = "Osamu Nishikawa and Eiichi Nomura and Minoru Wada and Yoshitaka Tsunashima and Shiro Horie and Mezame Shibata and Toshihiko Yoshimura and Ryuji Uemori",

year = "1983",

doi = "10.1116/1.582533",

language = "English",

volume = "1",

pages = "10--14",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "0734-211X",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. II. Ni-Si SYSTEM.

AU - Nishikawa, Osamu

AU - Nomura, Eiichi

AU - Wada, Minoru

AU - Tsunashima, Yoshitaka

AU - Horie, Shiro

AU - Shibata, Mezame

AU - Yoshimura, Toshihiko

AU - Uemori, Ryuji

PY - 1983

Y1 - 1983

N2 - Silicon-deposited Ni tips were heated at various temperatures up to 1000 K and structures and compositions of thin Ni silicide layers formed in situ were investigated by the atom probe and the field ion microscope (FIM). Although a mixed layer of Ni and Si was formed even at 80 K, FIM images of an ordered silicide structure were observed after heating the tip above 900 K. It was noticed that the evaporation field of the ordered silicide is significantly higher than those of Ni and Si, possibly due to a strong binding force among the constituting atoms. Since Ni is the major moving species, the Ni concentrations in the thin silicide layers were found to be as high as Ni//4Si near the surface and decreased to NiSi at the boundary of the silicide and the substrate Ni.

AB - Silicon-deposited Ni tips were heated at various temperatures up to 1000 K and structures and compositions of thin Ni silicide layers formed in situ were investigated by the atom probe and the field ion microscope (FIM). Although a mixed layer of Ni and Si was formed even at 80 K, FIM images of an ordered silicide structure were observed after heating the tip above 900 K. It was noticed that the evaporation field of the ordered silicide is significantly higher than those of Ni and Si, possibly due to a strong binding force among the constituting atoms. Since Ni is the major moving species, the Ni concentrations in the thin silicide layers were found to be as high as Ni//4Si near the surface and decreased to NiSi at the boundary of the silicide and the substrate Ni.

UR - http://www.scopus.com/inward/record.url?scp=0020545793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020545793&partnerID=8YFLogxK

U2 - 10.1116/1.582533

DO - 10.1116/1.582533

M3 - Article

AN - SCOPUS:0020545793

SN - 0734-211X

VL - 1

SP - 10

EP - 14

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

ATOM-PROBE STUDY OF THE EARLY STAGE OF SILICIDE FORMATION. II. Ni-Si SYSTEM.

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this