Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off

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    4 Citations (Scopus)

    Abstract

    Assist Gate (AG) MOSFET is proposed for low power loss operation of low-voltage power MOSFETs by a new structure with the optimum gate control. The second channel and accumulation layer reduce the channel and drift resistances. In addition, the gate control of AG-MOSFET decreases turn-off loss. 40 and 100 V-class AG-MOSFET characteristics were analyzed using TCAD simulation. The AG-MOSFET improves on-resistance and turn-off loss trade-off. The simulation results show 34% lower on-resistance with 16% lower turn-off loss for 40 V-class device and 21% lower on-resistance with 10% lower turn-off loss for 100 V-class device.

    Original languageEnglish
    Article number9085363
    Pages (from-to)1060-1062
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume41
    Issue number7
    DOIs
    Publication statusPublished - Jul 2020

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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