Abstract
Doped lanthanum gallate (La1-xSrx)(Ga 1-y-zMgyCoz)O3-(x+y+z)/2 (LSGMCO) perovskite oxide films were deposited on a quartz glass, LaAlO3 single-crystal substrate and porous anode electrode of a solid oxide fuel cell (SOFC) by pulsed laser deposition. It was necessary to increase the substrate temperature up to 800°C for a crystallization of the LSGMCO films. The film deposited on the LaAlO3 single-crystal substrate grew along the e-axis. The as-deposited LSGMCO thick film fabricated on the porous substrate at 800°C and at an oxygen pressure of 20Pa was formed from polycrystal columns and showed a high conductivity of 0.75/cm at a measurement temperature of 800°C. The activation energies were 0.72 eV at 600-800°C and 1.05eVat400-600°C.
Original language | English |
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Pages (from-to) | 299-302 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics |
Volume | 43 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2004 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)