TY - GEN
T1 - Applications of nanosecond laser annealing to fabricating p-n homo junction on ZnO nanorods
AU - Shimogaki, T.
AU - Ofuji, T.
AU - Tetsuyama, N.
AU - Okazaki, K.
AU - Higashihata, M.
AU - Nakamura, D.
AU - Ikenoue, H.
AU - Asano, T.
AU - Okada, T.
PY - 2013/5/30
Y1 - 2013/5/30
N2 - Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.
AB - Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.
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U2 - 10.1117/12.2003856
DO - 10.1117/12.2003856
M3 - Conference contribution
AN - SCOPUS:84878169231
SN - 9780819493958
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Oxide-Based Materials and Devices IV
T2 - Oxide-Based Materials and Devices IV
Y2 - 3 February 2013 through 6 February 2013
ER -