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Application of Surface Activated Bonding to Determine the Dislocation Generation Process at Asymmetric Grain Boundaries in Silicon
Yutaka Ohno, Hikaru Saito, Jianbo Liang, Naoteru Shigekawa, Tatsuya Yokoi, Katsuyuki Matsunaga, Koji Inoue, Yasuyoshi Nagai, Satoshi Hata
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution