TY - GEN
T1 - Application of Surface Activated Bonding to Determine the Dislocation Generation Process at Asymmetric Grain Boundaries in Silicon
AU - Ohno, Yutaka
AU - Saito, Hikaru
AU - Liang, Jianbo
AU - Shigekawa, Naoteru
AU - Yokoi, Tatsuya
AU - Matsunaga, Katsuyuki
AU - Inoue, Koji
AU - Nagai, Yasuyoshi
AU - Hata, Satoshi
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - An amorphous layer at a Si{111}/Si{115} bonding interface, formed via the surface activated bonding, is examined by using scanning transmission electron microscopy. The recrystallization process of the amorphous layer, accompanied with dislocation generation, is observed in-situ at elevated temperatures above 1000 °C.
AB - An amorphous layer at a Si{111}/Si{115} bonding interface, formed via the surface activated bonding, is examined by using scanning transmission electron microscopy. The recrystallization process of the amorphous layer, accompanied with dislocation generation, is observed in-situ at elevated temperatures above 1000 °C.
UR - http://www.scopus.com/inward/record.url?scp=85214984443&partnerID=8YFLogxK
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U2 - 10.1109/LTB-3D64053.2024.10774130
DO - 10.1109/LTB-3D64053.2024.10774130
M3 - Conference contribution
AN - SCOPUS:85214984443
T3 - 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
BT - 2024 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2024
Y2 - 30 October 2024 through 1 November 2024
ER -