Abstract
We have applied microwave-plasma oxidation to the gate oxide formation of strained-Si metal-oxide-semiconductor field-effect-transistor (MOSFET). Change in surface morphology of plasma oxidized strained-Si/SiGe is studied using an atomic force microscope (AFM) and compared with thermal oxidation. The AFM observation is carried out before and after oxidation in an identical area of a single sample. Plasma oxidation at 400 °C which proceeds under diffusion-limited condition suppressed nonuniform oxide growth caused by cross-hatch related surface morphology and is able to form gate oxide on strained-Si/SiGe without increase in surface roughness. Strained-Si n-channel MOSFETs on 15%-Ge content wafer were fabricated and the transconductance was enhanced by 70% compared with unstrained Si devices.
| Original language | English |
|---|---|
| Pages (from-to) | 225-230 |
| Number of pages | 6 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 8 |
| Issue number | 1-3 SPEC. ISS. |
| DOIs | |
| Publication status | Published - Feb 2005 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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