Abstract
(1) From the standpoint of the potential energy, the one-bond-type migration is divided into the BC (bond-centered type) and SP (split 〈1 0 0〉 type) migrations. In the BC migration, there are two kinds of atom migrations. One is that in which a BC atom pushes its neighboring atom to a BC site. This is the typical migration by the interstitialcy mechanism. The other is that in which a BC atom rotates about its neighboring atom and becomes the BC atom again. This is a feature of the BC migration. (2) The BC and SP migrations are applied to P diffusion in Si. Assuming there is no interaction between P and Si, the distance and probability for each step of the migration are obtained and applied to Si self-diffusion. Because they are not constant, the definition of the correlation factor for the self-diffusion is different from the usual one.
| Original language | English |
|---|---|
| Pages (from-to) | 128-131 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 210 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Mar 1 2000 |
| Event | 8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn Duration: Sept 15 1999 → Sept 18 1999 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry