TY - JOUR
T1 - Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon
AU - Gao, B.
AU - Jiptner, K.
AU - Nakano, S.
AU - Harada, H.
AU - Miyamura, Y.
AU - Sekiguchi, T.
AU - Kakimoto, Koichi
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI) .
Publisher Copyright:
© 2014 Elsevier B.V.
PY - 2015/2/1
Y1 - 2015/2/1
N2 - Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the [001] direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the [111] direction. The inapplicability of the AH model in a crystal with the axis in the [111] direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the [111] direction is more active than that in a crystal with the axis in the [001] direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.
AB - Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the [001] direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the [111] direction. The inapplicability of the AH model in a crystal with the axis in the [111] direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the [111] direction is more active than that in a crystal with the axis in the [001] direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.
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U2 - 10.1016/j.jcrysgro.2014.11.011
DO - 10.1016/j.jcrysgro.2014.11.011
M3 - Article
AN - SCOPUS:84912553149
SN - 0022-0248
VL - 411
SP - 49
EP - 55
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -