Applicability of the three-dimensional Alexander-Haasen (AH) model for the analysis of dislocation distributions in single-crystal silicon has been estimated. The numerical results obtained from the AH model agree well with the experimental data for both CZ-Si and FZ-Si crystals with the axis in the  direction but do not completely agree with the experimental data for the FZ-Si crystal with the axis in the  direction. The inapplicability of the AH model in a crystal with the axis in the  direction may arise from the neglect of dislocation propagation in this model, because the dislocation propagation in a crystal with the axis in the  direction is more active than that in a crystal with the axis in the  direction. Therefore, to increase the applicability of the AH model, it is necessary to include the effect of dislocation propagation.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry