Anomalous behavior of excess energy curves of InxGa1-xN grown on GaN and InN

Y. Kangawa, T. Ito, A. Mori, A. Koukitu

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34 Citations (Scopus)


We worked out the excess energies for bulk InxGa1-xN and InxGa1-xN thin films on GaN and InN in order to investigate their thermodynamic stabilities. It has been found that the excess energy maximum shifted toward x to approximately 0.80 for InGaN/GaN and x to approximately 0.10 for InGaN/InN due to the lattice constraint in contrast with x to approximately 0.50 for bulk. Moreover, it has been revealed that the excess energy for InGaN/GaN is larger than that for bulk at x>0.65. This suggests that In-rich films are less stable on GaN than bulk state. These results indicate that the lattice constraint has a significant influence on thermodynamic stabilities of thin films.

Original languageEnglish
Pages (from-to)401-404
Number of pages4
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - Dec 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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