Annealing of supersaturated cobalt in silicon

Hideo Suwaki, Kouji Hashimoto, Hiroshi Nakashima, Kimio Hashimoto

    Research output: Contribution to journalComment/debatepeer-review

    9 Citations (Scopus)


    The annealing of supersaturated cobalt in silicon was investigated by measuring the in-depth profiles of the cobalt concentration as a function of the annealing time at 1100°C. In-depth profiles of the annealing process could be represented by a complementary error function, and the diffusion coefficient is consistent with that of the in-diffusion process.

    Original languageEnglish
    Pages (from-to)1952-1953
    Number of pages2
    JournalJapanese journal of applied physics
    Issue number12 R
    Publication statusPublished - Dec 1986

    All Science Journal Classification (ASJC) codes

    • General Engineering
    • General Physics and Astronomy


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