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Annealing effects on transition region at Si-SiO2 interface
Yi Qun Zhang, Akira Kikutake, Shuichi Wada, Takashi Nakashige, Dong Ju Bai, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Noboru Teshima, Hiroshi Mori, Toshio Tsurushima
Research output: Contribution to journal › Article › peer-review