Annealing behavior of deep trap level in p-GaTe

Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)


    The deep levels in GaTe single crystal have been investigated by deep-level transient spectroscopy measurements. The hole-trapping level is detected at 0.8 eV above the valence band. It is found that the deep level is associated with the defect or defect complex and the concentration increases with increasing annealing temperature.

    Original languageEnglish
    Pages (from-to)3282-3283
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Issue number6 A
    Publication statusPublished - Jun 1998

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)


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