Anisotropic transport in graphene on SiC substrate with periodic nanofacets

S. Odaka; H. Miyazaki; S. L. Li; A. Kanda; K. Morita; S. Tanaka; Y. Miyata; H. Kataura; K. Tsukagoshi; Y. Aoyagi

doi:10.1063/1.3309701

Anisotropic transport in graphene on SiC substrate with periodic nanofacets

S. Odaka, H. Miyazaki, S. L. Li, A. Kanda, K. Morita, S. Tanaka, Y. Miyata, H. Kataura, K. Tsukagoshi, Y. Aoyagi

Applied Physics

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26 Citations (Scopus)

Abstract

Anisotropic transport in graphene field-effect transistors fabricated on a vicinal SiC substrate with a self-organized periodic nanofacet structure is investigated. Graphene thermally grown on a vicinal substrate contains two following regions: atomically flat terraces and nanofacets (atomically stepped slopes). The graphene film at a nanofacet is continuously connected between two neighboring terrace films. Anisotropic transport properties are clearly observed, indicating a difference in the graphene properties of the two regions. The observed anisotropic properties are discussed in terms of the effects of nanofacet structures on conductivity and electron mobility.

Original language	English
Article number	062111
Journal	Applied Physics Letters
Volume	96
Issue number	6
DOIs	https://doi.org/10.1063/1.3309701
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3309701

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title = "Anisotropic transport in graphene on SiC substrate with periodic nanofacets",

abstract = "Anisotropic transport in graphene field-effect transistors fabricated on a vicinal SiC substrate with a self-organized periodic nanofacet structure is investigated. Graphene thermally grown on a vicinal substrate contains two following regions: atomically flat terraces and nanofacets (atomically stepped slopes). The graphene film at a nanofacet is continuously connected between two neighboring terrace films. Anisotropic transport properties are clearly observed, indicating a difference in the graphene properties of the two regions. The observed anisotropic properties are discussed in terms of the effects of nanofacet structures on conductivity and electron mobility.",

author = "S. Odaka and H. Miyazaki and Li, {S. L.} and A. Kanda and K. Morita and S. Tanaka and Y. Miyata and H. Kataura and K. Tsukagoshi and Y. Aoyagi",

note = "Funding Information: This study was supported in part by MEXT KAKENHI (Grant Nos. 17069004 and 21241038). The authors would like to thank T. Minari, A. Kumatani, and H. Hiura for helpful discussions. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

year = "2010",

doi = "10.1063/1.3309701",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Anisotropic transport in graphene on SiC substrate with periodic nanofacets

AU - Odaka, S.

AU - Miyazaki, H.

AU - Li, S. L.

AU - Kanda, A.

AU - Morita, K.

AU - Tanaka, S.

AU - Miyata, Y.

AU - Kataura, H.

AU - Tsukagoshi, K.

AU - Aoyagi, Y.

N1 - Funding Information: This study was supported in part by MEXT KAKENHI (Grant Nos. 17069004 and 21241038). The authors would like to thank T. Minari, A. Kumatani, and H. Hiura for helpful discussions. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010

Y1 - 2010

N2 - Anisotropic transport in graphene field-effect transistors fabricated on a vicinal SiC substrate with a self-organized periodic nanofacet structure is investigated. Graphene thermally grown on a vicinal substrate contains two following regions: atomically flat terraces and nanofacets (atomically stepped slopes). The graphene film at a nanofacet is continuously connected between two neighboring terrace films. Anisotropic transport properties are clearly observed, indicating a difference in the graphene properties of the two regions. The observed anisotropic properties are discussed in terms of the effects of nanofacet structures on conductivity and electron mobility.

AB - Anisotropic transport in graphene field-effect transistors fabricated on a vicinal SiC substrate with a self-organized periodic nanofacet structure is investigated. Graphene thermally grown on a vicinal substrate contains two following regions: atomically flat terraces and nanofacets (atomically stepped slopes). The graphene film at a nanofacet is continuously connected between two neighboring terrace films. Anisotropic transport properties are clearly observed, indicating a difference in the graphene properties of the two regions. The observed anisotropic properties are discussed in terms of the effects of nanofacet structures on conductivity and electron mobility.

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DO - 10.1063/1.3309701

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JF - Applied Physics Letters

IS - 6

M1 - 062111

ER -

Anisotropic transport in graphene on SiC substrate with periodic nanofacets

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