Anisotropic plasma chemical vapor deposition of copper films in trenches

Kosuke Takenaka; Masao Onishi; Manabu Takenshita; Toshio Kinoshita; Kazunori Koga; Masaharu Shiratani; Yukio Watanabe

doi:10.1557/proc-766-e3.8

Anisotropic plasma chemical vapor deposition of copper films in trenches

Kosuke Takenaka, Masao Onishi, Manabu Takenshita, Toshio Kinoshita, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

An ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H₂ + C₂H₅OH[Cu(hfac)₂] discharges with a ratio H₂ / (H₂ + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

Original language	English
Pages (from-to)	465-470
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	766
DOIs	https://doi.org/10.1557/proc-766-e3.8
Publication status	Published - 2003
Event	Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States Duration: Apr 21 2003 → Apr 25 2003

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Anisotropic plasma chemical vapor deposition of copper films in trenches",

abstract = "An ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.",

author = "Kosuke Takenaka and Masao Onishi and Manabu Takenshita and Toshio Kinoshita and Kazunori Koga and Masaharu Shiratani and Yukio Watanabe",

year = "2003",

doi = "10.1557/proc-766-e3.8",

language = "English",

volume = "766",

pages = "465--470",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Anisotropic plasma chemical vapor deposition of copper films in trenches

AU - Takenaka, Kosuke

AU - Onishi, Masao

AU - Takenshita, Manabu

AU - Kinoshita, Toshio

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

PY - 2003

Y1 - 2003

N2 - An ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

AB - An ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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U2 - 10.1557/proc-766-e3.8

DO - 10.1557/proc-766-e3.8

M3 - Conference article

AN - SCOPUS:0348198995

SN - 0272-9172

VL - 766

SP - 465

EP - 470

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003

Y2 - 21 April 2003 through 25 April 2003

ER -

Anisotropic plasma chemical vapor deposition of copper films in trenches

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